UPA2825T1S-E2-AT

UPA2825T1S-E2-AT - Renesas Electronics America

Part Number
UPA2825T1S-E2-AT
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH 30V 8HVSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
UPA2825T1S-E2-AT PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
57037 pcs
Reference Price
USD 0.4522/pcs
Our Price
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UPA2825T1S-E2-AT Detailed Description

Part Number UPA2825T1S-E2-AT
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 16.5W (Tc)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 24A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package -
Package / Case 8-PowerWDFN
Weight -
Country of Origin -

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