RJK0601DPN-E0#T2

RJK0601DPN-E0#T2 - Renesas Electronics America

Part Number
RJK0601DPN-E0#T2
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH 60V 110A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RJK0601DPN-E0#T2 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4404 pcs
Reference Price
USD 0/pcs
Our Price
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RJK0601DPN-E0#T2 Detailed Description

Part Number RJK0601DPN-E0#T2
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 110A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 55A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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