N0603N-S23-AY - Renesas Electronics America

Part Number	N0603N-S23-AY
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	133nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7730pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 50A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-