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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › DRA2123Y0L
DRA2123Y0L

DRA2123Y0L - Panasonic Electronic Components

Part Number
DRA2123Y0L
Manufacturer
Panasonic Electronic Components
Brief Description
TRANS PREBIAS PNP 200MW MINI3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DRA2123Y0L PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.0699/pcs
Our Price
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DRA2123Y0L Detailed Description

Part Number DRA2123Y0L
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G3-B
Weight -
Country of Origin -

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