| Part Number | 2SK221100L |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 500mA, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MiniP3-F1 |
| Package / Case | TO-243AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
2SK2000 | FUJI | Power MOSFET | Details |
|
2SK2000-R | FUJI | Power MOSFET | Details |
|
2SK2002-01MR | FUJI | N-channel MOS-FET | Details |
|
2SK2003-01MR | FUJI | N-channel MOS-FET | Details |
|
2SK2004-01L | FUJI | N-channel MOS-FET | Details |
|
2SK2004-01S | FUJI | N-channel MOS-FET | Details |
|
2SK2009 | TOS | 2SK2009 TOS SOT-23 New Original Stocks | Details |
|
2SK2009(TE85L) | ORIGINAL | 2SK2009(TE85L) ORIGINAL SOT23 New Original Stocks | Details |
 |
2SK2009TE85LF | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 0.2A SMINI | Details |
|
2SK2018 | FUZI | 2SK2018 FUZI SOT-25.. New Original Stocks | Details |
