NVD6416ANLT4G-001

NVD6416ANLT4G-001 - ON Semiconductor

Part Number
NVD6416ANLT4G-001
Manufacturer
ON Semiconductor
Brief Description
MOSFET N-CH 100V DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NVD6416ANLT4G-001 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
168750 pcs
Reference Price
USD 0.405/pcs
Our Price
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NVD6416ANLT4G-001 Detailed Description

Part Number NVD6416ANLT4G-001
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Rds On (Max) @ Id, Vgs 74 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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