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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › NSVDTA114YM3T5G
NSVDTA114YM3T5G

NSVDTA114YM3T5G - ON Semiconductor

Part Number
NSVDTA114YM3T5G
Manufacturer
ON Semiconductor
Brief Description
TRANS PREBIAS PNP 260MW SOT723
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NSVDTA114YM3T5G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
620949 pcs
Reference Price
USD 0.0432/pcs
Our Price
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NSVDTA114YM3T5G Detailed Description

Part Number NSVDTA114YM3T5G
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 260mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
Weight -
Country of Origin -

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