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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased › NSBC123EDXV6T1G
NSBC123EDXV6T1G

NSBC123EDXV6T1G - ON Semiconductor

Part Number
NSBC123EDXV6T1G
Manufacturer
ON Semiconductor
Brief Description
TRANS 2NPN PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NSBC123EDXV6T1G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
129000 pcs
Reference Price
USD 0/pcs
Our Price
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NSBC123EDXV6T1G Detailed Description

Part Number NSBC123EDXV6T1G
Part Status Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Weight -
Country of Origin -

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