FDB3632_SB82115

FDB3632_SB82115 - ON Semiconductor

Part Number
FDB3632_SB82115
Manufacturer
ON Semiconductor
Brief Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FDB3632_SB82115 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
17737 pcs
Reference Price
USD 0/pcs
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FDB3632_SB82115 Detailed Description

Part Number FDB3632_SB82115
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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