| Part Number | FCP20N60_G |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
FCP20N60 | Fairchild/ON Semiconductor | MOSFET N-CH 600V 20A TO-220 | Details |
 |
FCP20N60FS | Fairchild/ON Semiconductor | MOSFET N-CH 600V TO220-3 | Details |
|
FCP20N60_F080 | Fairchild/ON Semiconductor | MOSFET N-CH 600V 20A TO-220 | Details |
|
FCP20N60_G | ON Semiconductor | INTEGRATED CIRCUIT | Details |
|
FCP220N80 | Fairchild/ON Semiconductor | MOSFET N-CH 800V 23A | Details |
|
FCP22N60N | Fairchild/ON Semiconductor | MOSFET N-CH 600V 22A TO-220 | Details |
|
FCP22N60N-F102 | ON Semiconductor | MOSFET N-CH 600V 22A TO220-3 | Details |
 |
FCP22N60N_F102 | Fairchild/ON Semiconductor | FCP22N60N IN TO220 F102 T/F OPTI | Details |
 |
FCP2416H124G | Cornell Dubilier Electronics (CDE) | CAP FILM 0.12UF 2% 50VDC 2416 | Details |
|
FCP2416H124G-D1 | Cornell Dubilier Electronics (CDE) | CAP FILM 0.12UF 2 50VDC 2416 | Details |
