FCP20N60_G

FCP20N60_G - ON Semiconductor

Part Number
FCP20N60_G
Manufacturer
ON Semiconductor
Brief Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FCP20N60_G PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
17747 pcs
Reference Price
USD 0/pcs
Our Price
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FCP20N60_G Detailed Description

Part Number FCP20N60_G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Weight -
Country of Origin -

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