FCH110N65F-F155 - ON Semiconductor

Part Number	FCH110N65F-F155
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4895pF @ 100V
FET Feature	-
Power Dissipation (Max)	357W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 Long Leads
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	FCH110N65F-F155	ON Semiconductor	MOSFET N-CH 650V 35A TO247	Details
	FCH110N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 35A TO247	Details