EMD4DXV6T5G Detailed Description
| Part Number |
EMD4DXV6T5G |
| Part Status |
Active |
| Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) (Ohms) |
47k, 10k |
| Resistor - Emitter Base (R2) (Ohms) |
47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) |
500nA |
| Frequency - Transition |
- |
| Power - Max |
500mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SOT-563 |
| Weight |
- |
| Country of Origin |
- |
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