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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › 2SA2013-TD-E
2SA2013-TD-E

2SA2013-TD-E - ON Semiconductor

Part Number
2SA2013-TD-E
Manufacturer
ON Semiconductor
Brief Description
TRANS PNP 50V 4A SOT89-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SA2013-TD-E PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
12500 pcs
Reference Price
USD 0.1848/pcs
Our Price
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2SA2013-TD-E Detailed Description

Part Number 2SA2013-TD-E
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 340mV @ 100mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 3.5W
Frequency - Transition 400MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PCP
Weight -
Country of Origin -

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