PDTC115EEF,115 - NXP USA Inc.

Part Number	PDTC115EEF,115
Part Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	20mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	100k
Resistor - Emitter Base (R2) (Ohms)	100k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Supplier Device Package	SC-89
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PDTC114EE	NXP	PDTC114EE NXP SOT-32.. New Original Stocks	Details
PDTC114EE,115	NXP USA Inc.	TRANS PREBIAS NPN 150MW SC75	Details
PDTC114EK	PHILIPS	PDTC114EK PHILIPS SOT23 New Original Stocks	Details
PDTC114EK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PDTC114EK,135	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PDTC114EM	NXP	PDTC114EM NXP SMD New Original Stocks	Details
PDTC114EM,315	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW SOT883	Details
PDTC114EMB,315	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW 3DFN	Details
PDTC114EQAZ	Nexperia USA Inc.	TRANS PREBIAS NPN 3DFN	Details
PDTC114ES,126	NXP USA Inc.	TRANS PREBIAS NPN 500MW TO92-3	Details