PDTC114ES,126

PDTC114ES,126 - NXP USA Inc.

Part Number
PDTC114ES,126
Manufacturer
NXP USA Inc.
Brief Description
TRANS PREBIAS NPN 500MW TO92-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PDTC114ES,126 PDF online browsing
Datasheet PDF Download
PDTC114ES,126.pdf
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
4308 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for PDTC114ES,126

PDTC114ES,126 Detailed Description

Part Number PDTC114ES,126
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR PDTC114ES,126