PSMN1R0-30YLDX - Nexperia USA Inc.

Part Number	PSMN1R0-30YLDX
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	121.35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8598pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	238W (Tc)
Rds On (Max) @ Id, Vgs	1.02 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669
Weight	-
Country of Origin	-

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