| Part Number | PSMN1R0-30YLDX |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 121.35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8598pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.02 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
PSMN102-200Y,115 | Nexperia USA Inc. | MOSFET N-CH 200V 21.5A LFPAK | Details |
 |
PSMN130-200D | NXP | PSMN130-200D NXP SOT-25.. New Original Stocks | Details |
 |
PSMN130-200D,118 | Nexperia USA Inc. | MOSFET N-CH 200V 20A DPAK | Details |
 |
PSMN165-200K,518 | Nexperia USA Inc. | MOSFET N-CH 200V 2.9A SOT96-1 | Details |
|
PSMN1R0-25YLDX | Nexperia USA Inc. | PSMN1R0-25YLD/LFPAK/REEL 7 Q1 | Details |
|
PSMN1R0-30YLC,115 | Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | Details |
|
PSMN1R0-30YLDX | Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | Details |
 |
PSMN1R0-40ULDX | Nexperia USA Inc. | PSMN1R0-40ULD/SOT1023/4 LEADS | Details |
|
PSMN1R0-40YLDX | Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | Details |
|
PSMN1R1-25YLC,115 | Nexperia USA Inc. | MOSFET N-CH 25V 100A LFPAK | Details |
