PSMN003-30P,127 - Nexperia USA Inc.

Part Number	PSMN003-30P,127
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PSMN003-30B	PHI	PSMN003-30B PHI SOT-26.. New Original Stocks	Details
PSMN003-30B,118	NXP USA Inc.	MOSFET N-CH 30V 75A D2PAK	Details
PSMN003-30P	NXP	PSMN003-30P NXP TO-220 New Original Stocks	Details
PSMN003-30P,127	Nexperia USA Inc.	MOSFET N-CH 30V 75A TO220AB	Details
PSMN004-25B	PHILIPS	PSMN004-25B PHILIPS SOT-26.. New Original Stocks	Details
PSMN004-36B,118	NXP USA Inc.	MOSFET N-CH 36V 75A D2PAK	Details
PSMN004-55W,127	NXP USA Inc.	MOSFET N-CH 55V 100A SOT429	Details
PSMN004-60B+118	NXP	PSMN004-60B+118 NXP SMD or Through Hole New Original Stocks	Details
PSMN004-60B,118	Nexperia USA Inc.	MOSFET N-CH 60V 75A D2PAK	Details
PSMN004-60P,127	NXP USA Inc.	MOSFET N-CH 60V 75A TO220AB	Details