PMN40ENEX - Nexperia USA Inc.

Part Number	PMN40ENEX
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	294pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	530mW (Ta), 4.46W (Tc)
Rds On (Max) @ Id, Vgs	38 mOhm @ 4.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457
Weight	-
Country of Origin	-

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