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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › UTV8100B
UTV8100B

UTV8100B - Microsemi Corporation

Part Number
UTV8100B
Manufacturer
Microsemi Corporation
Brief Description
TRANS RF BIPO 290W 15A 55RT2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
UTV8100B PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
70 pcs
Reference Price
USD 361.7164/pcs
Our Price
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UTV8100B Detailed Description

Part Number UTV8100B
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 470MHz ~ 860MHz
Noise Figure (dB Typ @ f) -
Gain 8.5dB ~ 9.5dB
Power - Max 290W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
Current - Collector (Ic) (Max) 15A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 55RT
Supplier Device Package 55RT
Weight -
Country of Origin -

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