MX2N5116 - Microsemi Corporation

Part Number	MX2N5116
Part Status	Active
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	30V
Drain to Source Voltage (Vdss)	30V
Current - Drain (Idss) @ Vds (Vgs=0)	25mA @ 15V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds	27pF @ 15V
Resistance - RDS(On)	175 Ohm
Power - Max	500mW
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18
Weight	-
Country of Origin	-

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