MSC1175M - Microsemi Corporation

Part Number	MSC1175M
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	400W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 5V
Current - Collector (Ic) (Max)	12A
Operating Temperature	250°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M218
Supplier Device Package	M218
Weight	-
Country of Origin	-

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MSC010SDA070K	Microsemi Corporation	DIODE SCHOTTKY 700V 10A TO220-3	Details