| Part Number | JANTXV2N5012S |
|---|---|
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 700V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | Details |
|
JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | Details |
|
JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | Details |
|
JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | Details |
|
JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | Details |
 |
JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
 |
JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
 |
JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
 |
JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
