| Part Number | APTDF30H1201G |
|---|---|
| Part Status | Active |
| Diode Type | Single Phase |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 1200V |
| Current - Average Rectified (Io) | 43A |
| Voltage - Forward (Vf) (Max) @ If | 3.1V @ 30A |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
APTDF100H100G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Details |
|
APTDF100H1201G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP1 | Details |
|
APTDF100H120G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Details |
|
APTDF100H170G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Details |
|
APTDF100H20G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Details |
|
APTDF100H601G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP1 | Details |
|
APTDF100H60G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Details |
|
APTDF200H100G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Details |
|
APTDF200H120G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Details |
|
APTDF200H170G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Details |
