• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › APT43GA90BD30
APT43GA90BD30

APT43GA90BD30 - Microsemi Corporation

Part Number
APT43GA90BD30
Manufacturer
Microsemi Corporation
Brief Description
IGBT 900V 78A 337W TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APT43GA90BD30 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
130 pcs
Reference Price
USD 10.07/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for APT43GA90BD30

APT43GA90BD30 Detailed Description

Part Number APT43GA90BD30
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 78A
Current - Collector Pulsed (Icm) 129A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Power - Max 337W
Switching Energy 875µJ (on), 425µJ (off)
Input Type Standard
Gate Charge 116nC
Td (on/off) @ 25°C 12ns/82ns
Test Condition 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Weight -
Country of Origin -

RELATED PRODUCTS FOR APT43GA90BD30

Image Part Number Manufacturers Description View
APT43F60B2 APT43F60B2 Microsemi Corporation MOSFET N-CH 600V 45A T-MAX Details
APT43F60L APT43F60L Microsemi Corporation MOSFET N-CH 600V 45A TO-264 Details
APT43GA90B APT43GA90B Microsemi Corporation IGBT 900V 78A 337W TO-247 Details
APT43GA90BD30 APT43GA90BD30 Microsemi Corporation IGBT 900V 78A 337W TO247 Details
APT43M60B2 APT43M60B2 Microsemi Corporation MOSFET N-CH 600V 45A T-MAX Details
APT43M60L APT43M60L Microsemi Corporation MOSFET N-CH 600V 45A TO-264 Details