| Part Number | JANTXV2N5339 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
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JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
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JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
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JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
