IXTT12N150HV - IXYS

Part Number	IXTT12N150HV
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1500V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3720pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Rds On (Max) @ Id, Vgs	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXTT10P50	IXYS	MOSFET P-CH 500V 10A TO-268	Details
IXTT10P60	IXYS	MOSFET P-CH 600V 10A TO-268	Details
IXTT110N10L2	IXYS	MOSFET N-CH 100V 110A TO-268	Details
IXTT110N10P	IXYS	MOSFET N-CH 100V 110A TO-268	Details
IXTT11P50	IXYS	MOSFET P-CH 500V 11A TO-268	Details
IXTT120N15P	IXYS	MOSFET N-CH 150V 120A TO-268	Details