IXTT110N10L2 - IXYS

Part Number	IXTT110N10L2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	600W (Tc)
Rds On (Max) @ Id, Vgs	18 mOhm @ 55A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTT02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO268	Details
IXTT100N25P	IXYS	MOSFET N-CH 250V 100A TO-268	Details
IXTT10N100D	IXYS	MOSFET N-CH 1000V 10A TO-268	Details
IXTT10N100D2	IXYS	MOSFET N-CH 1000V 10A TO-267	Details
IXTT10P50	IXYS	MOSFET P-CH 500V 10A TO-268	Details
IXTT10P60	IXYS	MOSFET P-CH 600V 10A TO-268	Details
IXTT110N10L2	IXYS	MOSFET N-CH 100V 110A TO-268	Details
IXTT110N10P	IXYS	MOSFET N-CH 100V 110A TO-268	Details
IXTT11P50	IXYS	MOSFET P-CH 500V 11A TO-268	Details
IXTT120N15P	IXYS	MOSFET N-CH 150V 120A TO-268	Details