IXTQ86N20T Detailed Description
| Part Number |
IXTQ86N20T |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200V |
| Current - Continuous Drain (Id) @ 25°C |
86A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Vgs (Max) |
±30V |
| FET Feature |
- |
| Power Dissipation (Max) |
480W (Tc) |
| Rds On (Max) @ Id, Vgs |
29 mOhm @ 500mA, 10V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-3P |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
- |
| Country of Origin |
- |
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