IXTQ10P50P - IXYS

Part Number	IXTQ10P50P
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2840pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	1 Ohm @ 5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTQ100N25P	IXYS	MOSFET N-CH 250V 100A TO-3P	Details
IXTQ102N15T	IXYS	MOSFET N-CH 150V 102A TO-3P	Details
IXTQ102N20T	IXYS	MOSFET N-CH 200V 102A TO3P	Details
IXTQ102N25T	IXYS	MOSFET N-CH 250V 102A TO-3P	Details
IXTQ10P50P	IXYS	MOSFET P-CH 500V 10A TO-3P	Details
IXTQ110N055P	IXYS	MOSFET N-CH 55V 110A TO-3P	Details
IXTQ110N10P	IXYS	MOSFET N-CH 100V 110A TO-3P	Details
IXTQ120N15P	IXYS	MOSFET N-CH 150V 120A TO-3P	Details
IXTQ120N15T	IXYS	MOSFET N-CH 150V 120A TO-3P	Details
IXTQ120N20P	IXYS	MOSFET N-CH 200V 120A TO-3P	Details