IXTP200N055T2 - IXYS

Part Number	IXTP200N055T2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	109nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTP200N055T2	IXYS	MOSFET N-CH 55V 200A TO-220	Details
IXTP200N075T	IXYS	MOSFET N-CH 75V 200A TO-220	Details
IXTP200N085T	IXYS	MOSFET N-CH 85V 200A TO-220	Details
IXTP20N65X	IXYS	MOSFET N-CH 650V 20A TO-220	Details
IXTP20N65XM	IXYS	MOSFET N-CH 650V 9A TO-220	Details
IXTP220N04T2	IXYS	MOSFET N-CH 40V 220A TO-220	Details
IXTP220N055T	IXYS	MOSFET N-CH 55V 220A TO-220	Details
IXTP220N075T	IXYS	MOSFET N-CH 75V 220A TO-220	Details
IXTP230N04T4	IXYS	MOSFET N-CH	Details
IXTP230N04T4M	IXYS	MOSFET N-CH	Details