IXTN550N055T2 - IXYS

Part Number	IXTN550N055T2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	550A
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	595nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	940W (Tc)
Rds On (Max) @ Id, Vgs	1.3 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IXTN550N055T2	IXYS	MOSFET N-CH 55V 550A SOT-227	Details
	IXTN5N250	IXYS	MOSFET N-CH 2500V 5A SOT227B	Details