IXTH20N50D - IXYS

Part Number	IXTH20N50D
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V
Vgs (Max)	±30V
FET Feature	Depletion Mode
Power Dissipation (Max)	400W (Tc)
Rds On (Max) @ Id, Vgs	330 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTH02N250	IXYS	MOSFET N-CH 2500V 0.2A TO247	Details
IXTH02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO247HV	Details
IXTH04N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF	Details
IXTH06N220P3HV	IXYS	MOSFET N-CH	Details
IXTH102N15T	IXYS	MOSFET N-CH 150V 102A TO-247	Details
IXTH102N20T	IXYS	MOSFET N-CH 200V 102A TO-247	Details
IXTH102N25T	IXYS	MOSFET N-CH 250V 102A TO-247	Details
IXTH10N100D	IXYS	MOSFET N-CH 1000V 10A TO-247	Details
IXTH10N100D2	IXYS	MOSFET N-CH 1000V 10A TO-247	Details
IXTH10P50	IXYS	MOSFET P-CH 500V 10A TO-247AD	Details