IXTH1N100

IXTH1N100 - IXYS

Part Number
IXTH1N100
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1000V 1.5A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTH1N100 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5861 pcs
Reference Price
USD 4.3313/pcs
Our Price
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IXTH1N100 Detailed Description

Part Number IXTH1N100
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 11 Ohm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Weight -
Country of Origin -

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