IXFX200N10P Detailed Description
Part Number |
IXFX200N10P |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
200A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs |
235nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
830W (Tc) |
Rds On (Max) @ Id, Vgs |
7.5 mOhm @ 100A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PLUS247™-3 |
Package / Case |
TO-247-3 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR IXFX200N10P