IXFX15N100 - IXYS

Part Number	IXFX15N100
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Rds On (Max) @ Id, Vgs	700 mOhm @ 7.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXFX120N25	IXYS	MOSFET N-CH 250V 120A PLUS247	Details
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