IXFT6N100F

IXFT6N100F - IXYS

Part Number
IXFT6N100F
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1KV 6A TO268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFT6N100F PDF online browsing
Datasheet PDF Download
IXFT6N100F.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
500 pcs
Reference Price
USD 13.64/pcs
Our Price
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IXFT6N100F Detailed Description

Part Number IXFT6N100F
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268 (IXFT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight -
Country of Origin -

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