IXFT20N60Q - IXYS

Part Number	IXFT20N60Q
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3300pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	350 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFT100N30X3HV	IXYS	300V/100A ULTRA JUNCTION X3-CLAS	Details
IXFT10N100	IXYS	MOSFET N-CH 1000V 10A TO-268	Details
IXFT120N15P	IXYS	MOSFET N-CH 150V 120A TO-268	Details
IXFT120N25X3HV	IXYS	250V/120A ULTRA JUNCTION X3-CLAS	Details
IXFT120N30X3HV	IXYS	300V/120A ULTRA JUNCTION X3-CLAS	Details
IXFT12N100	IXYS	MOSFET N-CH 1000V 12A TO-268	Details
IXFT12N100F	IXYS	MOSFET N-CH 1KV 12A TO268	Details
IXFT12N100Q	IXYS	MOSFET N-CH 1000V 12A TO268	Details
IXFT12N90Q	IXYS	MOSFET N-CH 900V 12A TO-268	Details
IXFT13N100	IXYS	MOSFET N-CH 1KV 12.5A TO-268	Details