IXFR12N100Q - IXYS

Part Number	IXFR12N100Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	ISOPLUS247™
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFR100N25	IXYS	MOSFET N-CH 250V 87A ISOPLUS247	Details
IXFR102N30P	IXYS	MOSFET N-CH 300V 60A ISOPLUS247	Details
IXFR10N100Q	IXYS	MOSFET N-CH 1000V 9A ISOPLUS247	Details
IXFR120N20	IXYS	MOSFET N-CH 200V 105A ISOPLUS247	Details
IXFR12N100	IXYS	MOSFET N-CH 1000V 10A ISOPLUS247	Details
IXFR12N100Q	IXYS	MOSFET N-CH 1000V 10A ISOPLUS247	Details
IXFR12N120P	IXYS	MOSFET N-CH 1200V ISOPLUS247	Details
IXFR13N50	IXYS	MOSFET N-CH 500V 13A ISOPLUS247	Details
IXFR140N20P	IXYS	MOSFET N-CH 200V 90A ISOPLUS247	Details
IXFR140N30P	IXYS	MOSFET N-CH 300V 70A ISOPLUS247	Details