SPI07N60C3HKSA1

SPI07N60C3HKSA1 - Infineon Technologies

Part Number
SPI07N60C3HKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 7.3A TO-262
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPI07N60C3HKSA1 PDF online browsing
Datasheet PDF Download
SPI07N60C3HKSA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4464 pcs
Reference Price
USD 0/pcs
Our Price
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SPI07N60C3HKSA1 Detailed Description

Part Number SPI07N60C3HKSA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 4.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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