SPB12N50C3ATMA1

SPB12N50C3ATMA1 - Infineon Technologies

Part Number
SPB12N50C3ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 560V 11.6A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPB12N50C3ATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
40317 pcs
Reference Price
USD 0/pcs
Our Price
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SPB12N50C3ATMA1 Detailed Description

Part Number SPB12N50C3ATMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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