SPA21N50C3 - Infineon Technologies

Part Number	SPA21N50C3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	34.5W (Tc)
Rds On (Max) @ Id, Vgs	190 mOhm @ 13.1A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPA20N60C3	INF	SPA20N60C3 INF TO-220.. New Original Stocks	Details
SPA20N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO220FP	Details
SPA20N60CFD	INFINEON	SPA20N60CFD INFINEON TO220F New Original Stocks	Details
SPA20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 600V 20.7A TO220-3	Details
SPA20N65C3	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220	Details
SPA20N65C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220	Details
SPA2118Z	SIRENZA	SPA2118Z SIRENZA SOP-8 New Original Stocks	Details
SPA21N50C3	Infineon Technologies	MOSFET N-CH 560V 21A TO220FP	Details
SPA21N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 21A TO220FP	Details
SPA221M04B	Cornell Dubilier Electronics (CDE)	CAP ALUM POLY 220UF 20% 4V SMD	Details