IPS65R600E6AKMA1 Detailed Description
Part Number |
IPS65R600E6AKMA1 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650V |
Current - Continuous Drain (Id) @ 25°C |
7.3A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
63W (Tc) |
Rds On (Max) @ Id, Vgs |
600 mOhm @ 2.1A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO251-3 |
Package / Case |
TO-251-3 Stub Leads, IPak |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR IPS65R600E6AKMA1