IPS65R600E6AKMA1

IPS65R600E6AKMA1 - Infineon Technologies

Part Number
IPS65R600E6AKMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V TO-251-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPS65R600E6AKMA1 PDF online browsing
Datasheet PDF Download
IPS65R600E6AKMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
38509 pcs
Reference Price
USD 0.6721/pcs
Our Price
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IPS65R600E6AKMA1 Detailed Description

Part Number IPS65R600E6AKMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak
Weight -
Country of Origin -

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