IPP114N12N3GXKSA1 - Infineon Technologies

Part Number	IPP114N12N3GXKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 60V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Rds On (Max) @ Id, Vgs	11.4 mOhm @ 75A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPP114N03L G	Infineon Technologies	MOSFET N-CH 30V 30A TO-220-3	Details
IPP114N03LG	I	IPP114N03LG I TO-220.. New Original Stocks	Details
IPP114N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 75A TO220-3	Details