IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1 - Infineon Technologies

Part Number
IPN95R2K0P7ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 950V 4A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPN95R2K0P7ATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
328977 pcs
Reference Price
USD 0.50049/pcs
Our Price
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IPN95R2K0P7ATMA1 Detailed Description

Part Number IPN95R2K0P7ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2 Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 400V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-3
Weight -
Country of Origin -

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