IPN95R2K0P7ATMA1 Detailed Description
Part Number |
IPN95R2K0P7ATMA1 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
950V |
Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
2 Ohm @ 1.7A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 400V |
FET Feature |
- |
Power Dissipation (Max) |
7W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-SOT223 |
Package / Case |
TO-261-3 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR IPN95R2K0P7ATMA1