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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPL65R099C7AUMA1
IPL65R099C7AUMA1

IPL65R099C7AUMA1 - Infineon Technologies

Part Number
IPL65R099C7AUMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 4VSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPL65R099C7AUMA1 PDF online browsing
Datasheet PDF Download
IPL65R099C7AUMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
8011 pcs
Reference Price
USD 3.2198/pcs
Our Price
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IPL65R099C7AUMA1 Detailed Description

Part Number IPL65R099C7AUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 400V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 5.9A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-VSON-4
Package / Case 4-PowerTSFN
Weight -
Country of Origin -

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