| Part Number | IPI65R380C6XKSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IPI65R099C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO-262 | Details |
|
IPI65R110CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 31.2A TO262 | Details |
|
IPI65R150CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 22.4A TO-262 | Details |
|
IPI65R190C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO262 | Details |
|
IPI65R190CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 17.5A TO262 | Details |
 |
IPI65R190CFDXKSA2 | Infineon Technologies | HIGH POWERLEGACY | Details |
|
IPI65R280C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 13.8A TO262 | Details |
|
IPI65R280E6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 13.8A TO262 | Details |
|
IPI65R310CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | Details |
|
IPI65R380C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | Details |
