| Part Number | IPG20N06S4L11ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 11.2 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPG20N04S408AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S409ATMA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Details |
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IPG20N04S412AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S412ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S4L07AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S4L07ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S4L08AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S4L08ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
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IPG20N04S4L11AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Details |
