IPD90N03S4L03ATMA1

IPD90N03S4L03ATMA1 - Infineon Technologies

Part Number
IPD90N03S4L03ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 30V 90A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD90N03S4L03ATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
18750 pcs
Reference Price
USD 0.4069/pcs
Our Price
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IPD90N03S4L03ATMA1 Detailed Description

Part Number IPD90N03S4L03ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 90A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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