IPD70N12S311ATMA1

IPD70N12S311ATMA1 - Infineon Technologies

Part Number
IPD70N12S311ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH TO-252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD70N12S311ATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
34685 pcs
Reference Price
USD 0.7447/pcs
Our Price
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IPD70N12S311ATMA1 Detailed Description

Part Number IPD70N12S311ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 11.1 mOhm @ 70A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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