IPD60R600CPATMA1

IPD60R600CPATMA1 - Infineon Technologies

Part Number
IPD60R600CPATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 600V 6.1A TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD60R600CPATMA1 PDF online browsing
Datasheet PDF Download
IPD60R600CPATMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4158 pcs
Reference Price
USD 0/pcs
Our Price
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IPD60R600CPATMA1 Detailed Description

Part Number IPD60R600CPATMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 3.3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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